LPM9014-MOSFET

产品型号 类型 输出通道 电压(V) RDS(ON)(mΩ) IDSS(uA) 最大电流(mA) 特征 封装 规格书
LPM9014 N Channel 1 20 50mΩ@VGS=4.5V 1 4200 Low impedance, Fast response, Small volume SOT23


N-Channel Enhancement Mode Field Effect Transistor


General Description

The LPM9014 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for low voltage applications, notebook computer power management and other battery powered circuits where high-side switching are needed.
 

Applications
 

Portable Media Players
Cellular and Smart mobile phone
LCD
DSC Sensor
Wireless Card

 

Features
 

20V/4.2A, RDC(ON)＜50mΩ(typ.)@VGS=4.5V 
20V/3.9A, RDC(ON)＜63mΩ(typ.)@VGS=2.5V
20V/3.0A, RDC(ON)＜87mΩ(typ.)@VGS=1.8V
Super high density cell design for extremely low RDC(ON)
SOT23 Package
 

Marking Information
 

Please see specification. 
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