LPM9022-MOSFET

产品型号 类型 输出通道 电压(V) RDS(ON)(mΩ) IDSS(uA) 最大电流(mA) 特征 封装 规格书
LPM9022 N 2 20 20mΩ@VGS=4.5V 1 6000 Low impedance, Quick response,Small current TDFN-8


Dual N -Channel Enhancement Power MOSFET


General Description

The LPM9022 integrates two N-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9022 is Pb-free and Halogen-free.
 

Applications
 

 Driver for Relay, Solenoid, Motor, LED etc.
 DC-DC converter circuit
 Power Switch
 Load Switch
 Charging

 

Features
 

 Trench Technology
 Single NMOS: VDS=20V, ID=6A
RDS(ON) < 26mΩ @ VGS=2.5V
RDS(ON) < 20mΩ @ VGS=4.5V
 Super high density cell design
 Extremely Low Threshold Voltage
 Small package DFN-6L 2*3mm
 

Marking Information
 

Please see specification. 
Please ask our service mailbox for what you want which is marketing@lowpowersemi.com.
We will send a copy to you as fast as we can.
 




 

业务咨询热线：0755-33000088 电子邮件：marketing@lowpowersemi.com Copyright © LPS Consulting 2005,All Right Reserved. 粤ICP备14043779号